UF3SC120009K4S
Voltage [Vr]
1200V
1200V
Courant max [Id]
120,0A
120,0A
RDS(on) typ
8.6mOhm
8.6mOhm
Capsule
TO-247-4L
TO-247-4L
Fournisseur
United Silicon Carbide
United Silicon Carbide
Description du produit
SiC Cascode FET, 1200V, 9mOhm, 3.Generation
- Lowest available RDS(on) <9mΩ at 1200V
- Balanced On-State current for paralleling due to positive RDS(on) coefficient
- Very low Body Diode temperature dependence QRR
- Low Eon Eoff switching energy
- Simplified use of standard Gate drivers
Fiche technique (English) pdfUF3SC120009K4S_1685-21716-0034-E-0120
Aperçu des produits (English) pdfUnitedSiC-New_1685-21716-0003-E-0120
