UF3SC120016K4S
Voltage [Vr]
1200V
1200V
Courant max [Id]
107,0A
107,0A
RDS(on) typ
16mOhm
16mOhm
Capsule
TO-247-4L
TO-247-4L
Fournisseur
United Silicon Carbide
United Silicon Carbide
Description du produit
The UF3SC120016K4S 1200V-16mOhm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET. This device comes in a TO-247-4L package.
Fiche technique (English) pdfUF3SC120016K4S_1685-21716-0033-E-0120
Aperçu des produits (English) pdfUnitedSiC-New_1685-21716-0003-E-0120