UF3SC065030B7S
Voltage [Vr]
650V
650V
Courant max [Id]
62,0A
62,0A
RDS(on) typ
27mOhm
27mOhm
Capsule
D2PAK-7L
D2PAK-7L
Fournisseur
United Silicon Carbide
United Silicon Carbide
Description du produit
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Available in the D2PAK-7L package with 650V and 27 mOhm.
Aperçu des produits (English) pdfUnitedSiC-New_1685-21716-0003-E-0120