UF3C065030K3S
Voltage [Vr]
650V
650V
Courant max [Id]
85A
85A
RDS(on) typ
27 mOhm
27 mOhm
Capsule
TO-247-3L
TO-247-3L
Fournisseur
United Silicon Carbide
United Silicon Carbide
Description du produit
This SiC FET device is based on a unique cascode circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. This model is a 650V, 27 mOhm product from 3rd generation and comes in a TO-247-§L package.
Aperçu des produits (English) pdfUnitedSiC-New_1685-21716-0003-E-0120
(English) pdfUF3C065030K3S_1685-21716-0002-E-0219
