UF4SC1200-Serie
Spannung [Vr]
1200V
1200V
Strom max [Id]
53A
53A
RDS(on) typ
23mOhm, 30mOhm
23mOhm, 30mOhm
Gehäuse
TO-247-4L
TO-247-4L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
UF4SC SiC FETs Based on a unique cascode configuration, the UF4SC Gen 4 SiC FET series is rated at 1200V and delivers industry-best performance Figures of Merit across RDS(on) x A, RDS(on) x Coss,tr and RDS(on) x Qg, making them the optimal power solution for mainstream 800V bus architectures. These devices can be safely driven with standard 0V to 12V or 15V gate drive voltage. Good threshold noise margin is maintained with a true 5V threshold voltage and, like previous generations, these new SiC FETs can be operated from all the typical Si IGBT, Si MOSFET and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp.
Datenblatt (English) pdfUF4SC120023K4S_1685-21716-0069-E-1122
Datenblatt (English) pdfUF4SC120030K4S_1685-21716-0071-E-1122
