UF3SC120016K3S
Spannung [Vr]
1200V
1200V
Strom max [Id]
107,0A
107,0A
RDS(on) typ
16mOhm
16mOhm
Gehäuse
TO-247-3L
TO-247-3L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
The UF3SC120016K3S 1200V-16mOhm SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET. This device comes in a TO-247-3L package.
Datenblatt (English) pdfUF3SC120016K3S_1685-21716-0036-E-0120
Produktübersicht (English) pdfUnitedSiC-New_1685-21716-0003-E-0120