UF3SC065080K3S
Spannung [Vr]
650V
650V
Strom max [Id]
31,0A
31,0A
RDS(on) typ
80mOhm
80mOhm
Gehäuse
TO-247-3L
TO-247-3L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
The UF3C065080K3S 650V 80m? RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET. This device comes in a TO-247-3L package.
Produktübersicht (English) pdfUnitedSiC-New_1685-21716-0003-E-0120