UF3SC065040B7S
Spannung [Vr]
650V
650V
Strom max [Id]
47,0A
47,0A
RDS(on) typ
42mOhm
42mOhm
Gehäuse
D2PAK-7L
D2PAK-7L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device is available in the D2
PAK-7L package with 650V and 42 mOhm.
Produktübersicht (English) pdfUnitedSiC-New_1685-21716-0003-E-0120