• SiC Cascoden FETs

    • UF3SC065030B7S

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    UF3SC065030B7S
    Spannung [Vr]
    650V
    Strom max [Id]
    62,0A
    RDS(on) typ
    27mOhm
    Gehäuse
    D2PAK-7L
    Hersteller
    United Silicon Carbide
    Produktbeschreibung

    This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. Available in the D2PAK-7L package with 650V and 27 mOhm.

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