UF3C120040K3S
Spannung [Vr]
1200V
1200V
Strom max [Id]
65,0A
65,0A
RDS(on) typ
35mOhm
35mOhm
Gehäuse
TO-247-3L
TO-247-3L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
This SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. Available in the TO-247-3L package with 1200V and 35 mOhm.
Datenblatt (English) pdfUF3C120040K3S_1685-21716-0010-E-0219
Produktübersicht (English) pdfUnitedSiC-New_1685-21716-0003-E-0120
