UF3C065080B7S
Spannung [Vr]
650V
650V
Strom max [Id]
27,0A
27,0A
RDS(on) typ
80mOhm
80mOhm
Gehäuse
D2PAK-7L
D2PAK-7L
Hersteller
United Silicon Carbide
United Silicon Carbide
Produktbeschreibung
The UF3C065080B7S 650V 85mOhm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device comes in a D2PAK-7L package.
Produktübersicht (English) pdfUnitedSiC-New_1685-21716-0003-E-0120
