UF3C065030K3S

UF3C065030K3S
Spannung [Vr]
650V
Strom max [Id]
85A
RDS(on) typ
27 mOhm
Gehäuse
TO-247-3L
Hersteller
United Silicon Carbide
Produktbeschreibung

This SiC FET device is based on a unique ‘cascode’ circuit

configuration, in which a normally-on SiC JFET is co-packaged with a Si

MOSFET to produce a normally-off SiC FET device. This model is a 650V, 27 mOhm product from 3rd generation and comes in a TO-247-§L package.