Intro – Don't waste time when designing with SiC
Benefits of using BeFAST for SiC Characterization
Harald Thomas, Segment Manager Power (Angst+Pfister Sensors and Power)
Wrap-Up and additional request, additional exchange information
Breakout Rooms (all Rooms open for Discussion from 15:15 onwards)
During all time of the webinar Rooms will be hosted by a Angst+Pfister Sensors and Power employee
Speaker & Information
Welcome - Efficient power circuit design
In recent years, the requirements for systems in power electronics have steadily increased. This is why there was a need to adapt the applications more and more specifically and to find suitable power semiconductors for this purpose. Especially when selecting very fast power semiconductors, there are big differences and therefore require a lot of time when it comes to matching.
Angst+Pfister Sensors and Power has developed the BeFAST tool to give developers the ability to quickly deploy the latest SiC technology. With the layout designed for industrial solutions, well-known test procedures can be carried out easily and without much time. BeFAST has created a tool that simplifies the recording of new products and saves time in the implementation of the project.
Session 1 - Benefits of using BeFAST for SiC Characterization
With the increasing efficiency of SiC MOSFET, an ever-increasing challenge arises to find an adequate test structure for the characterization of the products. Due to higher switching frequencies, parasitic influences are becoming increasingly important and make a layout complex. BeFAST takes these effects into account and provides a flexible test environment tailored to SiC technology for rapid characterization.
Session 2 - Temperature Monitoring
Temperature monitoring is an important factor for operational safety and service life in power electronics. In addition to the consideration of transition resistance and supply line, the complex requirements also include short rise times and low time constants. The very small sensors of the NXFT series enable this more efficient use of the system and can respond accordingly quickly when assembled.
Session 3 - Layout Design for SiC Tips & Tricks
With the WBG Technology higher frequencies are introduced and therefore require a high degree of care in the development of circuits. The effect of stray-inductance and -capacities on gate-driver and DC-Link must be reduced to ensure stable operation. The example of BeFAST is used to discuss the most important points in design and layout.
Session 4 - New IEC60747-17 standard and implementation to high CMTI products
The insulation of the control of SiC Gate Driver is implemented today with magnetic coupling. High requirements and insulation require a better method for determining the service life. The new IEC60747 standard calls for the time-combination of the partial discharge and insulation test. The new IL7 series consistently implements these requirements and also offers very high values for service life and CMTI.
Session 5 - SiC cascodes control of Gate using RC-snubber
SiC switches compete with established technologies and the usual reduction of the RDS(on) value by parallel switching. This makes it difficult to control the temperature range and reduces MTBF values. The very fast cascode switches require good control of the gate. The new United SiC generation offers extensive independence from temperature, is more finely graded in the RDS(on) and allows easy control of the gate via RC snubber.
Session 6 - SiC isolated DCDC benefits of high CMTI and low coupling Capacitance
Insulated DC/DC converters in the high-side of SiC circuits are subject to higher load. A faster degradation of the insulation must therefore be prevented. In addition to high changes due to the DC-Link voltage, transients induce a current to consider that affects the gate driver. Lower coupling capacity and high insulation are implemented in the MGJ-2D series and allow higher CMTI values.